onsemi1SMB26CAT3GÜberspannungsbegrenzer (TVS)
TVS Diode Single Bi-Dir 26V 600W Automotive AEC-Q101 2-Pin SMB T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| Single | |
| Bi-Directional | |
| 1 | |
| 28.9 | |
| 42.1 | |
| 26 | |
| 14.2 | |
| 5 | |
| 1 | |
| 600 | |
| -65 | |
| 150 | |
| 550 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.2 mm |
| Verpackungsbreite | 3.56 mm |
| Verpackungslänge | 4.32 mm |
| Leiterplatte geändert | 2 |
| Standard-Verpackungsname | DO |
| Lieferantenverpackung | SMB |
| 2 | |
| Leitungsform | J-Lead |
Save yourself hassle by equipping your device with ON Semiconductor's 1SMB26CAT3G TVS diode which will react to sudden or momentary overvoltage conditions. This device's maximum clamping voltage is 42.1 V and minimum breakdown voltage is 28.9 V. Its maximum leakage current is 5 μA. Its test current is 1 mA. Its peak pulse power dissipation is 600 W. This TVS diode has an operating temperature range of -65 °C to 150 °C. This product will be shipped in tape and reel packaging so that components can be mounted effectively.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.