Central Semiconductor2N3053 PBFREEGP BJT
Trans GP BJT NPN 40V 0.7A 5000mW 3-Pin TO-39 Box
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 40 | |
| 5 | |
| -65 to 200 | |
| 1.7@15mA@150mA | |
| 1.4@15mA@150mA | |
| 0.7 | |
| 25@150mA@2.5V|50@150mA@10V | |
| 5000 | |
| -65 | |
| 200 | |
| Box | |
| Durchmesser | 8.96 |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| 3 | |
| Leitungsform | Through Hole |
Central Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2N3053 PBFREE general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 5000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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