| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 60 | |
| 7 | |
| -65 to 200 | |
| 7 | |
| 3@3.3A@10A|1.1@400mA@4A | |
| 15 | |
| 5@10A@4V|20@4A@4V | |
| 115000 | |
| -65 | |
| 200 | |
| Tray | |
| Befestigung | Through Hole |
| Verpackungshöhe | 7.43 |
| Verpackungsbreite | 26.67(Max) |
| Verpackungslänge | 39.37 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3 |
| 3 | |
| Leitungsform | Through Hole |
Implement this versatile NPN 2N3055G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 115000 mW. This component will be shipped in tray format. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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