25-50% Rabatt
onsemi2SB1201S-TL-EGP BJT
Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 6 | |
| 1.2@50mA@1A | |
| 0.7@50mA@1A | |
| 2 | |
| 140@100mA@2V | |
| 800 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 |
| Verpackungsbreite | 5.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Design various electronic circuits with this versatile PNP 2SB1201S-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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