onsemi2SC3648S-TD-EGP BJT
Trans GP BJT NPN 160V 0.7A 1300mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| 150 | |
| 1.2@25mA@250mA | |
| 0.4@25mA@250mA | |
| 0.7 | |
| 100 | |
| 140@100mA@5V | |
| 1300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
If you require a general purpose BJT that can handle high voltages, then the NPN 2SC3648S-TD-E BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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