| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 400 | |
| 400 | |
| 5 | |
| 1@5mA@50mA | |
| 0.6@5mA@50mA | |
| 0.2 | |
| 100@50mA@10V | |
| 600 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5 mm |
| Verpackungsbreite | 4 mm |
| Verpackungslänge | 5 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | NP |
| 3 | |
| Leitungsform | Through Hole |
Compared to other transistors, the NPN 2SC4002E general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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