onsemi2SC4027S-TL-EGP BJT

Trans GP BJT NPN 160V 1.5A 1000mW 3-Pin(2+Tab) DPAK T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN 2SC4027S-TL-E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.

No Stock Available

Quantity Increments of 700 Minimum 700
  • Manufacturer Lead Time:
    8 Wochen
    • Price: 0,2967 €
    1. 700+0,2967 €
    2. 1400+0,2759 €

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