| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 1 | |
| 730@10V | |
| 6.5@10V | |
| 6.5 | |
| 155@10V | |
| 1500 | |
| 20 | |
| 17 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6(Max) mm |
| Verpackungsbreite | 2.5 mm |
| Verpackungslänge | 4.6(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | PW-Mini |
| 4 |
Make an effective common source amplifier using this 2SJ360(TE12L,F) power MOSFET from Toshiba. Its maximum power dissipation is 1500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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