| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 5 | |
| 1.2@10mA@200mA | |
| 0.22@10mA@200mA | |
| 0.7 | |
| 200@10mA@2V | |
| 600 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.88(Max) mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | MCPH |
| 3 | |
| Leitungsform | Flat |
The versatility of this PNP 30A02MH-TL-E GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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