10-25% Rabatt
onsemi50A02SS-TL-EGP BJT
Trans GP BJT PNP 50V 0.4A 200mW 3-Pin SSFP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 50 | |
| 50 | |
| 1.2@10mA@100mA | |
| 0.12@10mA@100mA | |
| 0.4 | |
| 200@10mA@2V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.63(Max) mm |
| Verpackungsbreite | 0.8 mm |
| Verpackungslänge | 1.4 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SSFP |
| 3 |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their PNP 50A02SS-TL-E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 50 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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