| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 50 | |
| ±10 | |
| 0.1 | |
| 10000 | |
| 1 | |
| 7800@4V | |
| 1.57@10V | |
| 1.57 | |
| 6.6@10V | |
| 250 | |
| 105 | |
| 42 | |
| 190 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.25(Max) mm |
| Verpackungsbreite | 1.65(Max) mm |
| Verpackungslänge | 3.05(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-59 |
| 3 | |
| Leitungsform | Gull-wing |
Use ON Semiconductor's 5LN01C-TB-E power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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