Alpha and Omega SemiconductorAO3407AMOSFETs
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 4.3 | |
| 48@10V | |
| 9.2@10V|4.6@4.5V | |
| 9.2 | |
| 668@15V | |
| 1400 | |
| 7 | |
| 5.5 | |
| 19 | |
| 7.5 | |
| -55 | |
| 150 | |
| 54@4.5V|34@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
This AO3407A power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1400 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.