| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.6 | |
| 110@10V | |
| 2.2@4.5V|4.3@10V | |
| 4.3 | |
| 197@15V | |
| 1400 | |
| 3.8 | |
| 4.1 | |
| 11.8 | |
| 7.5 | |
| -55 | |
| 150 | |
| 77@10V|125@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AO3409 power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 1400 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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