| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 7 | |
| 34@10V | |
| 6.7@4.5V|13.6@10V | |
| 13.6 | |
| 980@15V | |
| 3100 | |
| 7 | |
| 6 | |
| 20 | |
| 7.7 | |
| -55 | |
| 150 | |
| 21@10V|33@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Alpha & Omega Semiconductor's AO4449 power MOSFET can provide a solution. Its maximum power dissipation is 3100 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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