| Compliant | |
| EAR99 | |
| Active | |
| 8541.10.00.80 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| 4.5 | |
| 56@10V | |
| 4.3@4.5V|8.5@10V | |
| 8.5 | |
| 450@30V | |
| 2000 | |
| 1.9 | |
| 2.3 | |
| 15.7 | |
| 4.7 | |
| -55 | |
| 150 | |
| 46@10V|64@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
Create an effective common drain amplifier using this AO4828 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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