| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 10 | |
| 13@10V | |
| 6.6@4.5V|14@10V | |
| 14 | |
| 760@15V | |
| 2000 | |
| 6 | |
| 9 | |
| 17 | |
| 4.4 | |
| -55 | |
| 150 | |
| 10.8@10V|14@4.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 3.9 |
| Verpackungslänge | 4.9 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 8 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AO4832 power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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