| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±12 | |
| 5 | |
| 47@10V | |
| 7@4.5V|14@10V | |
| 14 | |
| 645@15V | |
| 2000 | |
| 9 | |
| 3.5 | |
| 41 | |
| 6.5 | |
| -55 | |
| 150 | |
| 39@10V|45@4.5V|59@2.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 mm |
| Verpackungsbreite | 1.6 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 |
Make an effective common source amplifier using this AO6401A power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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