| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Common Drain Dual Source | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 7 | |
| 21@10V | |
| 6@4.5V | |
| 6 | |
| 500@10V | |
| 1500 | |
| 18000 | |
| 1 | |
| 7400 | |
| 1 | |
| -55 | |
| 150 | |
| 17.2@10V|19.4@4.5V|20.7@3.6V|25@2.5V|35@1.8V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 mm |
| Verpackungsbreite | 4.4 mm |
| Verpackungslänge | 3 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSSOP |
| 8 | |
| Leitungsform | Gull-wing |
Increase the current or voltage in your circuit with this AO8820 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 1500 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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