Alpha and Omega SemiconductorAOD11S60MOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 11 | |
| 399@10V | |
| 11@10V | |
| 11 | |
| 545@100V | |
| 208000 | |
| 20 | |
| 20 | |
| 59 | |
| 20 | |
| -55 | |
| 150 | |
| 350@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 |
| Verpackungsbreite | 6.1 |
| Verpackungslänge | 6.6 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
Make an effective common source amplifier using this AOD11S60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 208000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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