Alpha and Omega SemiconductorAOD4N60MOSFETs
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| NRND | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 2300@10V | |
| 12@10V | |
| 12 | |
| 528@25V | |
| 104000 | |
| 21 | |
| 26 | |
| 34 | |
| 17 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 1800@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 |
| Verpackungsbreite | 6.1 |
| Verpackungslänge | 6.6 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
This AOD4N60 power MOSFET from Alpha & Omega Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 104000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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