Alpha and Omega SemiconductorAOD4S60MOSFETs
Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) DPAK
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 900@10V | |
| 6@10V | |
| 6 | |
| 263@100V | |
| 56800 | |
| 12 | |
| 8 | |
| 40 | |
| 18 | |
| -55 | |
| 150 | |
| 780@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.6 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 |
This AOD4S60 power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 56800 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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