Alpha and Omega SemiconductorAON2403MOSFETs
Trans MOSFET P-CH 12V 8A 6-Pin DFN-B EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 0.9 | |
| 8 | |
| 100 | |
| 1 | |
| 21@4.5V | |
| 12.7@4.5V | |
| 1370@6V | |
| 2800 | |
| 41.5 | |
| 25 | |
| 70 | |
| 11 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 16.5@4.5V|21.5@2.5V|30@1.8V|36@1.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN-B EP |
| 6 |
Increase the current or voltage in your circuit with this AON2403 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2800 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.