Alpha and Omega SemiconductorAON2408MOSFETs
Trans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| TrenchFET | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| 8 | |
| 100 | |
| 1 | |
| 14.5@4.5V | |
| 7@4.5V | |
| 782@10V | |
| 2800 | |
| 6 | |
| 4.5 | |
| 28 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 11.6@4.5V|15@2.5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55(Max) |
| Verpackungsbreite | 2 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN-B EP |
| 6 |
Compared to traditional transistors, AON2408 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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