Alpha and Omega SemiconductorAON6290MOSFETs
Trans MOSFET N-CH 100V 85A 8-Pin DFN EP
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| 85 | |
| 100 | |
| 1 | |
| 4.6@10V | |
| 28.5@4.5V|63@10V | |
| 63 | |
| 4600@50V | |
| 7300 | |
| 7.5 | |
| 5.5 | |
| 37 | |
| 14.5 | |
| -55 | |
| 150 | |
| 3.8@10V|4.7@6V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) mm |
| Verpackungsbreite | 5.55 mm |
| Verpackungslänge | 5.2 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
Compared to traditional transistors, AON6290 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 104000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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