Alpha and Omega SemiconductorAON6435MOSFETs
Trans MOSFET P-CH 30V 34A 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±25 | |
| 34 | |
| 17@10V | |
| 10@4.5V|21@10V | |
| 21 | |
| 1130@15V | |
| 4100 | |
| 7 | |
| 8 | |
| 15 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 13@10V|25@5V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) mm |
| Verpackungsbreite | 5.55 mm |
| Verpackungslänge | 5.2 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AON6435 power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 31000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.