Alpha and Omega SemiconductorAOT4N60MOSFETs
Trans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 2200@10V | |
| 15@10V | |
| 15 | |
| 511@25V | |
| 104000 | |
| 27 | |
| 28.7 | |
| 36 | |
| 20.2 | |
| -55 | |
| 150 | |
| 1900@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.14 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.03 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Make an effective common gate amplifier using this AOT4N60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 104000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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