Alpha and Omega SemiconductorAOTF10N60MOSFETs
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220F
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 10 | |
| 750@10V | |
| 31@10V | |
| 31 | |
| 1320@25V | |
| 50000 | |
| 64 | |
| 66 | |
| 76 | |
| 28 | |
| -55 | |
| 150 | |
| 600@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.87 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.16 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220F |
| 3 | |
| Leitungsform | Through Hole |
Compared to traditional transistors, AOTF10N60 power MOSFETs, developed by Alpha & Omega Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 50000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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