Alpha and Omega SemiconductorAOV11S60MOSFETs
Trans MOSFET N-CH 600V 8A 4-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4.1 | |
| 8 | |
| 100 | |
| 1 | |
| 500@10V | |
| 11@10V | |
| 11 | |
| 545@100V | |
| 8300 | |
| 20 | |
| 20 | |
| 59 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 420@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) |
| Verpackungsbreite | 8 |
| Verpackungslänge | 8 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 4 | |
| Leitungsform | No Lead |
Increase the current or voltage in your circuit with this AOV11S60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 156000 mW. This N channel MOSFET transistor operates in enhancement mode. This device utilizes alphamos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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