onsemiBC337RL1GGP BJT

Trans GP BJT NPN 45V 0.8A 625mW 3-Pin TO-92 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC337RL1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

A datasheet is only available for this product at this time.

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