| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 200@2mA@5V | |
| 625 | |
| -55 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) mm |
| Verpackungsbreite | 4.19(Max) mm |
| Verpackungslänge | 5.2(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Through Hole |
Use this versatile NPN BC546BG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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