NXP SemiconductorsBC817-25QAZGP BJT
Trans GP BJT NPN 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 100 | |
| 160@100mA@1V|40@500mA@1V | |
| 900 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.36(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 1.1 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN-D EP |
| 3 |
This specially engineered NPN BC817-25QAZ GP BJT from NXP Semiconductors comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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