onsemiBC817-40LT1GGP BJT

Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R

The versatility of this NPN BC817-40LT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

19 Stück: Versand in vsl. 4 Tagen

    Total0,11 €Price for 1

    • Versand in vsl. 4 Tagen

      Ships from:
      Hong Kong
      Date Code:
      +
      Manufacturer Lead Time:
      0 Wochen
      • In Stock: 19 Stück
      • Price: 0,1118 €

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