onsemiBC818-40LT1GGP BJT

Trans GP BJT NPN 25V 0.5A 300mW 3-Pin SOT-23 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN BC818-40LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.

Import TariffMay apply to this part

Auf Lager: 50.096 Stück

Regional Inventory: 41.530

    Total0,12 €Price for 1

    41.530 auf Lager: morgen versandbereit

    • Service Fee  6,08 €

      morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2129+
      Manufacturer Lead Time:
      8 Wochen
      Minimum Of :
      1
      Maximum Of:
      41530
      Country Of origin:
      China
         
      • Price: 0,1211 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • morgen versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2129+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 41.530 Stück
      • Price: 0,1211 €
    • Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2227+
      Manufacturer Lead Time:
      30 Wochen
      Country Of origin:
      China
      • In Stock: 8.566 Stück
      • Price: 0,0199 €

    KI-Systeme in der Medizin

    Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.