Infineon Technologies AGBC846PNH6327XTSA1GP BJT
Trans GP BJT NPN/PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 80 | |
| 65 | |
| 6 | |
| 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the npn and PNP BC846PNH6327XTSA1 general purpose bipolar junction transistor, developed by Infineon Technologies, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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