NXP SemiconductorsBC846W,115GP BJT

Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SC-70 T/R

NXP Semiconductors brings you the solution to your high-voltage BJT needs with their NPN BC846W,115 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.

A datasheet is only available for this product at this time.

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