10-25% Rabatt
Diodes IncorporatedBC847B-13-FGP BJT
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 6 | |
| -65 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 350 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.98 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BC847B-13-F general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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