| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6@NPN|5@PNP | |
| -55 to 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA@NPN|0.3@0.5mA@10mA|0.65@5mA@100mA@PNP | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 380 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.25 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-88 |
| 6 |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the npn and PNP BC847BPDW1T2G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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