Infineon Technologies AGBCW66KFE6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.8A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 45 | |
| 5 | |
| 150 | |
| 1.25@10mA@100mA|1.25@50mA@500mA | |
| 0.3@10mA@100mA|0.45@50mA@500mA | |
| 0.8 | |
| 20 | |
| 75@10mA@1V|100@100mA@1V|40@500mA@1V | |
| 500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Infineon Technologies brings you the solution to your high-voltage BJT needs with their NPN BCW66KFE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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