10-25% Rabatt
onsemiBD242BGGP BJT
Trans GP BJT PNP 80V 3A 40000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 5 | |
| 1.2@0.6A@3A | |
| 3 | |
| 25@1A@4V|10@3A@4V | |
| 40000 | |
| -65 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 8.9 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.1 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220AB |
| 3 | |
| Leitungsform | Through Hole |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BD242BG general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 40 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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