| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 32 | |
| 32 | |
| 5 | |
| 0.5@0.2A@2A | |
| 4 | |
| 40@10mA@5V|85@500mA@1V|50@2A@1V | |
| 36000 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11.1(Max) mm |
| Verpackungsbreite | 3(Max) mm |
| Verpackungslänge | 7.8(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BD436TG GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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