| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 0.8@0.3A@3A | |
| 4 | |
| 20@10mA@5V|40@0.5A@1V|25@2A@1V|30@3A@1V | |
| 36000 | |
| -55 | |
| 150 | |
| Box | |
| Befestigung | Through Hole |
| Verpackungshöhe | 10.85 |
| Verpackungsbreite | 2.7 |
| Verpackungslänge | 7.6 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-225 |
| 3 | |
| Leitungsform | Through Hole |
Design various electronic circuits with this versatile NPN BD439G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 36000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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