Infineon Technologies AGBDP949H6327XTSA1GP BJT
Trans GP BJT NPN 60V 3A 5000mW 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 1.3@0.2A@2A | |
| 0.5@0.2A@2A | |
| 3 | |
| 100 | |
| 25@10mA@5V|85@500mA@1V|50@2A@2V | |
| 5000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Look no further than Infineon Technologies' BDP949H6327XTSA1 general purpose bipolar junction transistor, which can easily operate in high voltage ranges.
| EDA / CAD Models |
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