NXP SemiconductorsBFG541,115HF-BJT
Trans RF BJT NPN 15V 0.12A 650mW 4-Pin(3+Tab) SC-73 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single Dual Emitter | |
| 1 | |
| 20 | |
| 15 | |
| <20 | |
| 2.5 | |
| 0.12 | |
| 0.12 to 0.5 | |
| 50 | |
| 8V/40mA | |
| 60@40mA@8V | |
| 50 to 120 | |
| 2 | |
| 1 | |
| 650 | |
| 21(Typ) | |
| 15 | |
| 34 | |
| 9000(Typ) | |
| 1.8 | |
| -65 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Lieferantenverpackung | SC-73 |
| 4 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the BFG541,115 RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 175 °C.
| EDA / CAD Models |
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