10-25% Rabatt
NXP SemiconductorsBFU660F,115HF-BJT
Trans RF BJT NPN 5.5V 0.06A 225mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single Dual Emitter | |
| 1 | |
| 16 | |
| 5.5 | |
| <20 | |
| 2.5 | |
| 0.06 | |
| 0.06 to 0.12 | |
| 100 | |
| 4V/60mA | |
| 90@10mA@2V | |
| 50 to 120 | |
| 0.664 | |
| 0.138 | |
| 225 | |
| 18.5(Typ) | |
| 25 | |
| 28 | |
| 21000(Typ) | |
| 0.65(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | DFP |
| 4 | |
| Leitungsform | Flat |
In addition to offering the benefits of traditional BJTs, the BFU660F,115 RF amplifier from NXP Semiconductors is perfect for high radio frequency power situations. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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