| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single | |
| 1 | |
| 10 | |
| 3 | |
| <20 | |
| 1.3 | |
| 0.03 | |
| 0.001 to 0.06 | |
| 100 | |
| 205@2mA@2V | |
| 200 to 300 | |
| 0.31 | |
| 0.084 | |
| 160 | |
| 11.7(Typ) | |
| 24.5 | |
| 25.5 | |
| 53000(Typ) | |
| 0.75(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.33(Max) mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 0.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN_C |
| 3 | |
| Leitungsform | No Lead |
Compared to other transistors, the BFU730LXZ RF bi-polar junction transistor, developed by NXP Semiconductors, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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