NXP SemiconductorsBFU768F,115HF-BJT
Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin DFP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Si | |
| Single Dual Emitter | |
| 1 | |
| 10 | |
| 2.8 | |
| <20 | |
| 1 | |
| 0.07 | |
| 0.06 to 0.12 | |
| 100 | |
| 155@10mA@2V | |
| 120 to 200 | |
| 220 | |
| 5.9(Typ) | |
| 13.1 | |
| 18.8 | |
| 1.2(Typ) | |
| 300(Typ) | |
| 40(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) |
| Verpackungsbreite | 1.35(Max) |
| Verpackungslänge | 2.2(Max) |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | DFP |
| 4 | |
| Leitungsform | Flat |
Your circuit will operate at higher RF frequencies with this BFU768F,115 RF amplifier from NXP Semiconductors. This RF transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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