| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| SiGe | |
| Single Dual Emitter | |
| 1 | |
| 9.5 | |
| 9.5 | |
| <20 | |
| 1.5 | |
| 0.015 | |
| 0.001 to 0.06 | |
| 2V | |
| 1200@1.5mA@1.5V | |
| 500 to 3600 | |
| 0.3 | |
| 0.035 | |
| 300 | |
| 2(Typ) | |
| 15.5(Max) | |
| 12.5 | |
| 90000(Typ) | |
| 0.85(Min) | |
| -40 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 1.35(Max) mm |
| Verpackungslänge | 2.2(Max) mm |
| Leiterplatte geändert | 4 |
| Lieferantenverpackung | DFP |
| 4 | |
| Leitungsform | Flat |
Designed with semiconductor technology, this BFU910FX RF amplifier from NXP Semiconductors easily operates at high RF frequencies. This product's minimum DC current gain is 655. It has a maximum collector emitter saturation voltage of 1 V. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C.
| EDA / CAD Models |
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