BournsBIDD05N60T IGBT-Chip

Insulated Gate Bipolar Transistors (IGBTs)

The Bourns® IGBT discrete BID series combines technology from a MOS gate and a bipolar transistor, creating the right component for high voltage and high current applications. This device uses advanced Trench-Gate Field-Stop technology providing greater control of the dynamic characteristics while resulting in a lower Collector-Emitter Saturation Voltage (VCE(sat)) and fewer switching losses. In addition, this structure increases the robustness of the device and gives a lower RTH. The Bourns® IGBT solution is suitable for SMPS, UPS and PFC applications.

New in POWrFuse High-Power Fuses:

Bourns Model BID Series Insulated Gate Bipolar Transistors (IGBTs) New Product Brief

Bourns Model BID Series IGBT Product Guide

Meeting Higher Power Density & Efficiency Using Discrete IGBTs in Electrical Spot-Welding Applications Application Note

The Benefits of IGBT Switching Protection Using TVS and PTVS Diodes Application Note