Infineon Technologies AGBSC017N04NSGATMA1MOSFETs
Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 30 | |
| 1.7@10V | |
| 81@10V | |
| 81 | |
| 6600@20V | |
| 2500 | |
| 6.8 | |
| 5.8 | |
| 34 | |
| 23 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.4@10V | |
| 400 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
This BSC017N04NSGATMA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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