Infineon Technologies AGBSC027N04LSGMOSFETs
Trans MOSFET N-CH 40V 24A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 24 | |
| 2.7@10V | |
| 31@4.5V|64@10V | |
| 64 | |
| 5100@20V | |
| 2500 | |
| 6.2 | |
| 5.6 | |
| 39 | |
| 9.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1 |
| Verpackungsbreite | 5.9 |
| Verpackungslänge | 5.15 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SON |
| Lieferantenverpackung | TDSON EP |
| 8 | |
| Leitungsform | No Lead |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSC027N04LSG power MOSFET. Its maximum power dissipation is 2500 mW. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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